? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 100 a i l(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 450 a i a t c = 25 c25a e as t c = 25 c 750 mj p d t c = 25 c 150 w dv/dt i s i dm , v dd v dss , t j 175c 3 v/ns t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 /9..27 n/lb. weight 8 g n-channel enhancement mode avalanche rated fast intrinsic rectifier v dss = 100v i d25 = 2x100a r ds(on) 9m ds99752b(05/12) trench tm power mosfet common-gate pair IXTL2X180N10T (electrically isolated back surface) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 5 a t j = 150 c 250 a r ds(on) v gs = 10v, i d = 50a, note 1 9 m features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 2500v~ electrical isolation z 175c operating temperature z avalanche rated z high current handling capability z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z automotive - motor drives - dc/dc conversion - 42v power bus - abs systems z dc/dc converters and off-line ups z primary switch for 24v and 48v systems z high current switching applications z distributed power architechtures and vrms z electronic valve train systems z high voltage synchronous recifier preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions . IXTL2X180N10T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 70 110 s c iss 6900 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 923 pf c rss 162 pf r gi gate input resistance 3.0 t d(on) 33 ns t r 54 ns t d(off) 42 ns t f 31 ns q g(on) 151 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 39 nc q gd 45 nc r thjc 1.0 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 180 a i sm repetitive, pulse width limited by t jm 450 a v sd i f = 50a, v gs = 0v, note 1 1.0 v t rr 60 ns i f = 25a, v gs = 0v -di/dt = 100a/ s, v r = 50v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 25a r g = 3.3 (external) note 1. pulse test, t 300 s, duty cycle, d 2%. isoplus i5-pak tm (ixtl) outline 1,5 = drain 2,4 = source 3 = gate 6 = isolated preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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